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Substrate Current Capacity Calculator (AlN vs FR4)

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Compares the maximum current a trace of the same geometry can carry on an aluminium-nitride versus an FR4 substrate using a 1D conduction model, and spells out voltage drop, drop ratio and dissipation — AlN’s high thermal conductivity raises the current capacity by an order of magnitude.

Key points

Substrate Current Capacity Calculator (AlN vs FR4): Compares the maximum current a trace of the same geometry can carry on an aluminium-nitride versus an FR4 substrate using a 1D conduction model, and spells out voltage drop, drop ratio and dissipation — AlN’s high thermal conductivity raises the current capacity by an order of magnitude. Formula: I = W·√(ΔT·k·T/(ρ·h)),ΔV = I·ρ·L/(W·t),δ = √(ρ/(π·f·μ)). Enter parameters on the DD-CAT IDE online tool page to get results instantly, with a calculation-model diagram that updates with the inputs. 1D steady-state conduction model: all conductor heat is assumed to flow down through the substrate to an ideal heat sink, ignoring lateral spreading (conservative). AlN carries about √(170/0.3) ≈ 24× the current of FR4 — the same trace on a ceramic substrate handles an order of magnitude more current.

Inputs

I = W·√(ΔT·k·T/(ρ·h)),ΔV = I·ρ·L/(W·t),δ = √(ρ/(π·f·μ))

Calculation model (updates with parameters)

AlN aluminium nitrideW = 1.00 mmBackside heat sinkCurrent capacity 117.5 AFull-load drop 2.894 Vk ≈ 170 W/(m·K)t = 35 µmh = 0.50 mmFR4 (glass-epoxy)W = 1.00 mmBackside heat sinkCurrent capacity 4.936 AFull-load drop 121.6 mVk ≈ 0.3 W/(m·K)t = 35 µmh = 0.50 mmAt the same geometry, AlN carries ≈ 23.8× the FR4 currentSkin depth δ = 66.08 µm | effective conducting layer t_eff = 35.0 µm (copper 35 µm)Dark copper layer = effective conducting layer within the skin depth (schematic, not to scale)
AlN (aluminium nitride) current capacity117.5 A
FR4 current capacity4.936 A
Current ratio (AlN ÷ FR4)23.8 ×
Trace resistance R (same for both substrates)24.63 mΩ
voltage drop ΔV @ 10 A246.3 mV
Voltage drop percentage4.93%
Load-end voltage Vs − ΔV4.754 V
dissipation P @ 10 A2.463 W
AlN full-load drop ΔV2.894 V
FR4 full-load drop ΔV121.6 mV
Copper current density (at AlN capacity)3357 A/mm²
Skin depth δ66.08 µm
Effective conductor thickness t_eff35.0 µm
AC / DC resistance ratio1.00 ×

Engineering notes

  • 1D steady-state conduction model: all conductor heat is assumed to flow down through the substrate to an ideal heat sink, ignoring lateral spreading (conservative).
  • AlN carries about √(170/0.3) ≈ 24× the current of FR4 — the same trace on a ceramic substrate handles an order of magnitude more current.
  • Voltage drop ΔV = I·ρ·L/(W·t) is independent of the substrate material — only the copper geometry and length matter. The drop ratio ΔV/Vs on a power rail is usually kept below 5%.
  • In width mode the AlN trace is narrower and therefore more resistive, so at the same current its drop is higher than FR4 — an unavoidable consequence of matching current with different widths. Check both drop and temperature rise.
  • At AlN’s high currents the real limit is usually the copper: use thick copper / DBC (100–300µm) and check fusing and electromigration.
  • Skin depth δ = √(ρ/(π·f·μ)): as frequency rises the current crowds toward the surface; when the copper is thicker than δ the AC resistance scales up by t/δ. Enter 0 for DC (δ is treated as infinite).

FAQ

What is Substrate Current Capacity Calculator (AlN vs FR4) for?
Compares the maximum current a trace of the same geometry can carry on an aluminium-nitride versus an FR4 substrate using a 1D conduction model, and spells out voltage drop, drop ratio and dissipation — AlN’s high thermal conductivity raises the current capacity by an order of magnitude.
What is the formula for Substrate Current Capacity Calculator (AlN vs FR4)?
Core formula: I = W·√(ΔT·k·T/(ρ·h)),ΔV = I·ρ·L/(W·t),δ = √(ρ/(π·f·μ)). The tool returns results instantly using this formula and the selected parameters.
What engineering notes should I keep in mind when using Substrate Current Capacity Calculator (AlN vs FR4)?
1D steady-state conduction model: all conductor heat is assumed to flow down through the substrate to an ideal heat sink, ignoring lateral spreading (conservative). AlN carries about √(170/0.3) ≈ 24× the current of FR4 — the same trace on a ceramic substrate handles an order of magnitude more current. Voltage drop ΔV = I·ρ·L/(W·t) is independent of the substrate material — only the copper geometry and length matter. The drop ratio ΔV/Vs on a power rail is usually kept below…
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